to-220-3l plastic-encapsulate diodes SBL2030CT, 35ct, 40ct, 45ct, 50ct, 60ct schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) value symbol parameter sbl 2030ct sbl 2035ct sbl 2040ct sbl 2045ct sbl 2050ct sbl 2060ct unit v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 30 35 40 45 50 60 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 42 v i o average rectified output current@ t c =95 20 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 250 a p d power dissipation 2 w r ja thermal resistance from junction to ambient 50 /w t j junction temperature 125 t stg storage temperature -55~+150 to-220-3l 1. anode 2. cathode 3. a node 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symbol device test conditions min typ max unit SBL2030CT 30 sbl2035ct 35 sbl2040ct 40 sbl2045ct 45 sbl2050ct 50 reverse voltage v (br) sbl2060ct i r =0.5ma 60 v SBL2030CT v r =30v sbl2035ct v r =35v sbl2040ct v r =40v sbl2045ct v r =45v sbl2050ct v r =50v reverse current i r sbl2060ct v r =60v 0.45 ma SBL2030CT-2045ct 0.55 forward voltage v f sbl2050ct,2060ct i f =10a 0.7 v typical total capacitance c tot SBL2030CT-2060ct v r =4v,f=1mhz 600 pf 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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